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BLV4N60
N-channel Enhancement Mode Power MOSFET
* * *
Avalanche Energy Specified Fast Switching Simple Drive Requirements
BVDSS RDS(ON) ID
600V 2.2 4A
Description
This advanced high voltage MOSFET is produced using Belling's proprietary DMOS technology. Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted )
Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Operating Junction Temperature Range Storage Temperature Range Value 600 + 20 4 2.53 16 104 0.83 218 4 10.4 -55 to +150 -55 to +150 Units V V A A A W W/ mJ A mJ
o o
C C
Thermal Characteristics
Symbol Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case Thermal Resistance, Junction to Ambient Max. Max. Value 1.2 62.5 Units / W / W
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BLV4N60
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics ( TC=25C unless otherwise noted )
Symbol BVDSS BVDSS /TJ RDS(ON) VGS(th) g fs IDSS Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance(note3) Drain-Source Leakage Current Drain-Source Leakage Current Tc=125 Gate-Source Leakage Current Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS=0V, ID=250uA Reference to 25, ID=1mA VGS=10V, ID=2A VDS=VGS, ID=250uA VDS=15V, ID=2A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS= 20V VDD=480V ID=4A VGS=10V note3 VDD=300V ID=4A RG=25 note3 VDS=25V VGS=0V f = 1MHz Min. 600 2 Typ. 0.6 3 23.7 5.4 9.4 13 21 35 25 690 125 14 Max. 2.2 4 1 100 100 Units V V/ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
IGSS Qg Qgs Qgd t (on) tr t (off) tf Ciss Coss Crss
Source-Drain Diode Characteristics
Symbol IS ISM VSD trr Qr r Note
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
Parameter
Test Conditions
Min. -
Typ. 680 2
Max. 4 16 1.4 -
Units A A V ns uC
Continuous Source Diode Forward Current Pulsed Source Diode Forward Current (note1) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge VGS=0V, IS=4A VGS=0V, IS=4A dIF/dt = 100A/us
(2) L=25mH, Ias=4AVdd=50VRg=25staring Tj=25C
(3) Pulse width 300 us; duty cycle 2%
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BLV4N60
N-channel Enhancement Mode Power MOSFET
Typical Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVdss vs. Junction Temperature
Fig 4. Normalized On-Resistance vs. Junction Temperature
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BLV4N60
N-channel Enhancement Mode Power MOSFET
Typical Characteristics continued
Fig 5. On-Resistance Variation vs. Drain Current and Gate Voltage
Fig 6. Body Diode Forward Voltage Variation vs. Source Current and Temperature
Fig 7. Gate Charge Characteristics
Fig 8. Capacitance Characteristics
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BLV4N60
N-channel Enhancement Mode Power MOSFET
Typical Characteristics continued
Fig 9. Maximum Safe Operating Area
Fig 10. Transient Thermal Response Curve
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BLV4N60
N-channel Enhancement Mode Power MOSFET
Test Circuit and Waveform
Fig 11. Gate Charge Circuit
Fig 12. Gate Charge Waveform
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Unclamped Inductive Switching Test Circuit
Fig 16. Unclamped Inductive Switching Waveforms
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